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2SK3842
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
2SK3842
Switching Regulator Applications, DC-DC Converter and Motor Drive Applications
* * * * Low drain-source ON resistance: RDS (ON) =4.6 m (typ.) High forward transfer admittance: |Yfs| = 93 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 60 V) Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
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Absolute Maximum Ratings (Ta = 25C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage DC Drain current (Note 1) (Note 1) Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range Pulse(t < 1 ms) = Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 60 60 20 75 300 125 322 75 12.5 150 -55 to150 A Unit V V V
W mJ A mJ C C
JEDEC JEITA TOSHIBA
SC-97 2-9F1B
Weight: 0.74 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics Thermal resistance, channel to case Symbol Rth (ch-c) Max 1.0 Unit C/W
Circuit Configuration
Notice:
Please use the S1 pin for gate input signal return. Make sure that the main current flows into S2 pin.
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Note 1: Ensure that the channel temperature does not exceed 150. Note 2: VDD = 25 V, Tch = 25C (initial), L = 78 H, RG = 25 , IAR = 75 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution.
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2SK3842
Electrical Characteristics (Note 4) (Ta = 25C)
Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance www..com Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge tf toff Qg Qgs Qgd VDD 48 V, VGS = 10 V, ID = 75 A - Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) Yfs Ciss Crss Coss tr ton 10 V VGS 0V 4.7 ID = 38 A VOUT VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = 60 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -20 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 38 A VDS = 10 V, ID = 38 A Min 60 35 2.0 46 RL = 0.79 VDD 30 V - 35 200 196 148 48 nC Typ. 4.6 93 12400 700 1100 18 45 Max 10 100 4.0 5.8 ns pF Unit A A V V m S
Duty < 1%, tw = 10 s =
Note 4: Connect the S1 and S2 pins together, and ground them except during switching time measurement.
Source-Drain Ratings and Characteristics (Note 5) (Ta = 25C)
Characteristics Continuous drain reverse current (Note 1, Note 5) Pulse drain reverse current (Note 1,Note 5) Symbol IDR1 IDRP1 IDR2 IDRP2 VDS2F trr Qrr Test Condition IDR1 = 75 A, VGS = 0 V IDR = 75 A, VGS = 0 V, dIDR/dt = 50 A/s Min Typ. 70 77 Max 75 300 1 4 -1.7 Unit A A A A V ns nC
Continuous drain reverse current (Note 1, Note 5) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1,Note 5)
Note 5: Current flowing between the drain and the S1 pin, when open the S2 pin is left open. Unless otherwise specified, connect the S1 and S2 pins together, and ground them.
Marking
Part No. (or abbreviation code)
K3842
Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.
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2SK3842
ID - VDS
100 10 8.0 80 7.0 6.5 60 5.2 40 5.4 5.8 6.0 5.6 Common source Tc = 25C pulse test 200 10 8.0 160 7.0
ID - VDS
6.5 6.3 6.0 5.8 5.6 80 5.4 5.2 40 VGS = 4.5 V 5.0 VGS = 4.5 V 2.0 0 0 1 2 3 4 5 Common source Tc = 25C pulse test
Drain current ID (A)
Drain current ID (A)
120
5.0
20
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0 0 0.4 0.8 1.2
1.6
Drain-source voltage
VDS (V)
Drain-source voltage
VDS (V)
ID - VGS
160 Common source VDS = 20 V Pulse test 100 1.0
VDS - VGS
Common source Tc = 25C Pulse test
VDS (V) Drain-source voltage
0.8
Drain current ID (A)
120
0.6
80 25
0.4
ID = 75 A
40 Tc = -55C 0 0 2 4 6 8
0.2
38 19
10
0
0
4
8
12
16
20
Gate-source voltage
VGS (V)
Gate-source voltage
VGS (V)
Yfs - ID
1000 Common source VDS = 20 V Pulse test 100 100 100 Common source Tc = 25C 25 Pulse test
RDS (ON) - ID
Forward transfer admittance Yfs (S)
Drain-source ON resistance
Tc = -55C
(m) RDS (ON)
10 VGS = 10 V 1 1
10
1 1
10
100
1000
10
100
1000
Drain current ID (A)
Drain current ID (A)
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2SK3842
RDS (ON) - Tc
10 Common source VGS = 10 V Pulse test 38 6 19 1000 Common source Tc = 25C Pulse test
IDR - VDS
Drain-source ON resistance RDS (ON) (m)
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ID = 75 A
(A)
Drain reverse current IDR
10 100
5
3
4
10
2
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0 -80 -40 0 40 80 120 160 1 0 0.4
1
VGS = 0 V
0.8
1.2
1.6
2.0
Case temperature
Tc (C)
Drain-source voltage
VDS (V)
Capacitance - VDS
100000 5
Vth - Tc
Vth (V) Gate threshold voltage
4
(pF)
Ciss 10000
Capacitance C
3
2
1000 Common source VGS = 0 V f = 1 MHz Tc = 25C 100 0.1 1 10
Coss
1
Crss 100 0 -80
Common source VDS = 10 V ID = 1 mA Pulse test -40 0 40 80 120 160
Drain-source voltage
VDS (V)
Case temperature Tc (C)
PD - Tc
150 50
Dynamic input/output characteristics
25 VDS
Drain power dissipation PD (W)
VDS (V)
120
40
20
Drain-source voltage
VDD = 12 V 24V VGS 10 48V Common source ID = 75 A Tc = 25C Pulse test 0
60
20
10
30
5
0 0
40
80
120
160
0
80
160
240
0 320
Case temperature
Tc (C)
Total gate charge Qg (nC)
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Gate-source voltage
90
30
15
VGS (V)
2SK3842
rth - tw
10
Normalized transient thermal impedance rth (t)/Rth (ch-c)
1
Duty = 0.5 0.2 0.1
0.1
0.05 0.02 0.01
Single Pulse
PDM t T Duty = t/T Rth (ch-c) = 1.0C/W
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0.01 10
100
1m
10 m
100 m
1
10
Pulse width
tw
(S)
Safe operating area
1000 500 300 100 s * 500
EAS - Tch
Avalanche energy EAS (mJ)
ID max (pulsed) *
400
I max (continuous) 100 D
1 ms *
Drain current ID (A)
300
30
200
10 5 3 DC operation Tc = 25C
100
0 25 1 0.5 *: Single nonrepetitive pulse Tc = 25C
50
75
100
125
150
Channel temperature (initial) Tch (C)
0.3 Curves must be derated linearly with increase in temperature. 0.1 0.1 1 10
VDSS max 100
15 V 0V
BVDSS IAR VDD VDS
Drain-source voltage
VDS (V)
Test circuit
RG = 25 VDD = 25 V, L = 78 H
Wave form AS = 1 B VDSS L I2 B 2 VDSS - VDD
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RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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